1 elm53402ca - s 5 - g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit maximum junction - to - a mbient r ja 120 c /w parameter symbol limit unit drain - s ource voltage vds 2 0 v gate - s ource v oltag e vgs 12 v conti nuous drain current(tj=150 c) t a = 25 c id 3.6 a t a = 70 c 2.0 pulsed d rain current idm 10 a power dissipation t c = 25 c pd 1 .25 w t c = 70 c 0.80 j unction and storage temperature range tj , tstg - 55 to 150 c elm53402ca - s uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. pin configuration c ircuit so t - 23 (top vi ew) pin no. pin name 1 gate 2 source 3 drain s g d 1 2 3 single n-channel mosfet ? vds = 2 0v ? id = 3.6 a ? rds (on) < 7 0 m (vgs = 4.5 v) ? rds (on) < 8 0 m (vgs = 2 .5v) ? rds (on) < 10 0 m (vgs = 1.8 v) t a = 25 c . u nless otherwise noted.
2 elm53402ca - s 5 - electrical characteristics parameter symbol condition min. typ. max. unit static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 2 0 v zero g ate voltage drain current idss vds = 16 v, vgs = 0v 1 a t a = 8 5 c 10 gate - b ody leakage current ig s s vds = 0v , vgs = 1 2 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 0.3 0.8 v on s tate drain current i d ( on ) vgs = 4.5 v, vds = 5v 6 a vgs = 2 .5 v, vds = 5v 4 static drain - s ource on - r esistance r d s (o n ) vgs = 4.5 v, id = 2.4 a 56 70 m vgs = 2 .5v, id = 2.0 a 66 80 vgs = 1.8 v, id = 1. 8 a 86 100 forward transconductance gfs vds = 5 v, id = 3.6 a 10 s diode forward voltage vsd i s = 1. 6 a, vgs = 0v 0.85 1.20 v max. body - d iode continuous c urrent is 1.6 a dynamic parameters input capacitance c iss vgs = 0v, vds = 1 0 v, f = 1mh z 340 pf output capacitance c oss 115 pf reverse transfer capacitance c r ss 33 pf switching parameters total gate charge q g vgs = 4.5 v, vds = 1 0 v id = 3.6 a 4.2 5.0 nc gate - s ource charge q gs 0.6 nc gate - d rain charge q gd 0.4 nc turn - o n delay time t d (on) vgs = 4.5 v, vds = 1 0 v r l = 2.8 , id=3.6a rgen = 1 8 15 ns turn - o n rise t ime t r 8 15 ns turn - o ff delay time t d ( of f ) 25 40 ns turn - o ff fall t ime t f 8 15 ns single n-channel mosfet t a = 25 c . u nless otherwise noted.
3 elm53402ca - s 5 - typical electrical and thermal characteristics single n-channel mosfet a f n 3 4 1 4 a 2 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . b j u l y 2 0 1 0 p a g e 3 t y p i c a l c h a r a c t e r i s t i c s
4 elm53402ca - s 5 - single n-channel mosfet a f n 3 4 1 4 a 2 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . b j u l y 2 0 1 0 p a g e 4 t y p i c a l c h a r a c t e r i s t i c s
5 elm53402ca - s 5 - single n-channel mosfet t est circuit and w aveform a f n 3 4 1 4 a 2 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . b j u l y 2 0 1 0 p a g e 5 t y p i c a l c h a r a c t e r i s t i c s
|
